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Interaction of the components in the Li-Al-Sb ternary system at 470 KInteraction of the components in the Li-Al-Sb ternary system at 470 K
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New ternary phases from the Tb-Cu-Cd: XRD and DSC investigationsNew ternary phases from the Tb-Cu-Cd: XRD and DSC investigations
Przejścia fazowe w szkle metalicznym Co66Ni12Si9B13Przejścia fazowe w szkle metalicznym Co66Ni12Si9B13
Absorpcja wodoru oraz krystalograficzne charakterystyki stopu LaNi4.4Zn0.6Absorpcja wodoru oraz krystalograficzne charakterystyki stopu LaNi4.4Zn0.6
Interaction of the components in the La-Co-Zn ternary system at 470 KInteraction of the components in the La-Co-Zn ternary system at 470 K
Investigation of the interaction between the components in the Ti-Cu-Zn (670 K) and Fe-Zn-Ge (570 K) systemsInvestigation of the interaction between the components in the Ti-Cu-Zn (670 K) and Fe-Zn-Ge (570 K) systems
Nanostructured porous silicon: Properties modificationNanostructured porous silicon: Properties modification
Space-charge-perturbed and space-charge-limited current transients in disordered solidsSpace-charge-perturbed and space-charge-limited current transients in disordered solids
Curve fitting methods in the analysis of thermally stimulated relaxation phenomenaCurve fitting methods in the analysis of thermally stimulated relaxation phenomena
Pamięci Włodzimierza Sawickiego (Volodymyra Grigorovitcha Savitskiego)Pamięci Włodzimierza Sawickiego (Volodymyra Grigorovitcha Savitskiego)
Recent advancements in the theoretical description of thermally stimulated relaxation phenomenaRecent advancements in the theoretical description of thermally stimulated relaxation phenomena
Interlayer coupling in magnetic superlattices with electron density inhomogeneitiesInterlayer coupling in magnetic superlattices with electron density inhomogeneities
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Mechanizmy przewodnictwa elektrycznego w cienkich warstwach p-trójfenyluMechanizmy przewodnictwa elektrycznego w cienkich warstwach p-trójfenylu
Naprężenia własne a rozkład defektów krystalograficznych w płytkach Cz-Si po technologii CMOSNaprężenia własne a rozkład defektów krystalograficznych w płytkach Cz-Si po technologii CMOS