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Polish English
Własności elektryczne chitozanu i octanu chitozanuWłasności elektryczne chitozanu i octanu chitozanu
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Nanostructured porous silicon: Properties modificationNanostructured porous silicon: Properties modification
Space-charge-perturbed and space-charge-limited current transients in disordered solidsSpace-charge-perturbed and space-charge-limited current transients in disordered solids
Spis treściSpis treści
Pamięci Włodzimierza Sawickiego (Volodymyra Grigorovitcha Savitskiego)Pamięci Włodzimierza Sawickiego (Volodymyra Grigorovitcha Savitskiego)
Interlayer coupling in magnetic superlattices with electron density inhomogeneitiesInterlayer coupling in magnetic superlattices with electron density inhomogeneities
Interaction of the components in the La-Co-Zn ternary system at 470 KInteraction of the components in the La-Co-Zn ternary system at 470 K
Isothermal sections of the Li-{Ti, V}-Bi phase diagrams at 470 KIsothermal sections of the Li-{Ti, V}-Bi phase diagrams at 470 K
X-ray examinations of acenaphthene, fluoranthene and pyrene crystals grown from solutionsX-ray examinations of acenaphthene, fluoranthene and pyrene crystals grown from solutions
Investigation of the interaction between the components in the Ti-Cu-Zn (670 K) and Fe-Zn-Ge (570 K) systemsInvestigation of the interaction between the components in the Ti-Cu-Zn (670 K) and Fe-Zn-Ge (570 K) systems
Curve fitting methods in the analysis of thermally stimulated relaxation phenomenaCurve fitting methods in the analysis of thermally stimulated relaxation phenomena
Recent advancements in the theoretical description of thermally stimulated relaxation phenomenaRecent advancements in the theoretical description of thermally stimulated relaxation phenomena
Interaction of the components in the Li-Al-Sb ternary system at 470 KInteraction of the components in the Li-Al-Sb ternary system at 470 K
New ternary phases from the Tb-Cu-Cd: XRD and DSC investigationsNew ternary phases from the Tb-Cu-Cd: XRD and DSC investigations
Gęstość prądu całkowitego w półprzewodniku niejednorodnym ze zmienną przerwą energetyczną w obecności nośników nadmiarowych i gradientu temperaturyGęstość prądu całkowitego w półprzewodniku niejednorodnym ze zmienną przerwą energetyczną w obecności nośników nadmiarowych i gradientu temperatury